ty n-channel mosfet RU1C002UN ? structure ? dimensions (unit : mm) ? features 1) low on-resistance. 2) low voltage drive(1.2v drive). ? application switching ? packaging specifications ? inner circuit package taping code tcl basic ordering unit (pieces) 3000 RU1C002UN ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 20 v gate-source voltage v gss ? 8v continuous i d ? 200 ma pulsed i dp ? 400 ma power dissipation p d 150 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a reference land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 833 ? c / w * each terminal mounted on a reference land. parameter type drain current parameter (1) gate (2) source (3) drain ? 1 body diode ? 2 esd protection diode *2 *1 *2 * umt3f 2.0 0.32 0.65 0.65 1.3 2.1 1.25 0.425 0.425 (1) (2) (3) 0.9 0.53 0.53 0.13 abbreviated symbol : qr ? 2 ? 1 (3) (1) (2) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss 20 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =20v, v gs =0v gate threshold voltage v gs (th) 0.3 - 1.0 v v ds =10v, i d =1ma - 0.8 1.2 i d =200ma, v gs =2.5v - 1.0 1.4 i d =200ma, v gs =1.8v - 1.2 2.4 i d =40ma, v gs =1.5v - 1.6 4.8 i d =20ma, v gs =1.2v forward transfer admittance l y fs l 400 - - ms v ds =10v, i d =200ma input capacitance c iss - 25 - pf v ds =10v output capacitance c oss - 10 - pf v gs =0v reverse transfer capacitance c rss - 10 - pf f=1mhz turn-on delay time t d(on) -5-nsv dd 10v, i d =150ma rise time t r - 10 - ns v gs =4.0v turn-off delay time t d(off) - 15 - ns r l =68 ? fall time t f - 10 - ns r g =10 ? *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =100ma, v gs =0v *pulsed conditions conditions ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com RU1C002UN product specification www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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